p- to n-type conversion in GaSb by ion beam milling

MOVPE of GaSb/InGaAsSb multilayers and fabrication of dual band photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper pGaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87A...

The significance of in situ conditions in the characterization of GaSb nanopatterned surfaces via ion beam sputtering

Formation and Transfer of GaAsN Nanostructure Layers

Related Articles Analyzing pattern retention for multilayer focused ion beam induced quantum dot structures J. Vac. Sci. Technol. B 31, 031208 (2013) Review of radiation damage in GaN-based materials and devices J. Vac. Sci. Technol. A 31, 050801 (2013) Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate J. Vac. Sci. Technol. B 31, 03C123 (2013) Polarity control and tr...

Nanoporous Structure Formation in GaSb, InSb, and Ge by Ion Beam Irradiation under Controlled Point Defect Creation Conditions

Ion beam irradiation-induced nanoporous structure formation was investigated on GaSb, InSb, and Ge surfaces via controlled point defect creation using a focused ion beam (FIB). ‎This paper compares the nanoporous structure formation under the same extent of point defect creation while changing the accelerating voltage and ion dose. Although the same number of point defects were created in each ...

Midwave infrared InAs/GaSb superIattice photodiode with a dopant-free p-n junction

Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p-n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the SL period, the residual background carriers of this adjustable material can be either n-type or p-type. Using this flexibility in residual doping of the SL material, the p-n...